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STRESS MODULATION OF THE DEGREE OF SPIN POLARIZATION ON BULK SEMICONDUCTORS
JUAN CUAUHTEMOC SALAZAR GONZALEZ
Bernardo Mendoza
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Electronic spin
Stress modulation
Spin polarization
Semiconductors
"The thesis work presented here is part of the research I performed under the supervision of Dr. Bernardo Mendoza during my Master in Science studies at Centro de Investigaciones en Óptica, A.C. (León, México). It's main objectives are (1) to investigate the well known fact that the optical electron spin-injection on bulk semiconductors is affected by the application of strain, and (2) to explore the possibility of modulate such phenomenon by either compressive or expansive strains. To address this project, a simple and effective method to compute the spin injection as a function of strain (actually, of a related quantity) is proposed, considering both compressive and expansive strains. For this purpose, the approach of density functional theory (DFT) was taken, employing pseudopotential band structures based on the local density approximation (LDA). The computational tools employed were a computer cluster and almost solely free software programs. At the end it is shown that the application of stress can effectively modulate, and even enhance, the optical spin-injection on bulk semiconductors."
2008-12
Tesis de maestría
Inglés
León, Guanajuato
Público en general
Salazar González, (2008). "Stress Modulation of the Degree of Spin Polarization on Bulk Semiconductors". Tesis de Maestría en Ciencias (Óptica). Centro de Investigaciones en Óptica, A.C. León, Guanajuato. 99 pp.
ÓPTICA
Versión publicada
publishedVersion - Versión publicada
Aparece en las colecciones: MAESTRIA EN CIENCIAS (ÓPTICA)

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